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(B) In forward biasing,the external voltage reduces the potential barrier,which allows majority charge carriers to cross the junction easily. This pro

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Diffusion in forward bias,drift in reverse bias

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(B) In forward biasing,the external voltage reduces the potential barrier,which allows majority charge carriers to cross the junction easily. This process is known as diffusion,and it is the dominant mechanism for current flow in forward bias.In reverse biasing,the external voltage increases the potential barrier,which prevents majority charge carriers from crossing the junction. However,minority charge carriers can still cross the junction due to the electric field present in the depletion region. This process is known as drift,and it is the dominant mechanism for the small leakage current in reverse bias.

The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junction are:

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